| 摘要 |
<p>PURPOSE: A method for improving uniformity of fine pattern is provided to prevent the deformation of size and shape caused by exposure process by adjusting the transmittivity of light source of the mask used during the exposure process. CONSTITUTION: A plurality of chips is formed on a wafer. A reticle including the chip area and the periphery area corresponding to the plurality of chips is formed. The transmittivity of the periphery area is reduced through CDC(critical dimension correction) compensation. The exposure process is implemented by using the reticle, transmittivity of which is reduced, on the semiconductor wafer.</p> |
