| 摘要 |
<p>PURPOSE: A minute pattern manufacturing method of a semiconductor is provided to form a greater number of line and space patterns in a pitch while maintaining the size and pitch of the pattern on a photo mask. CONSTITUTION: An etched layer(11) is formed on a substrate(10). A hard mask film is formed on an etched layer. A hard mask pattern(12B) is formed by etching the hard mask film. An oxidization film(15) is formed by oxidizing the hard mask pattern surface. An insulating layer(16), covering the oxidization film or the nitride film, is formed.</p> |
