发明名称 |
Method and circuit for driving word line of memory cell |
摘要 |
A method and circuit are provided for driving a word line. The word line driving circuit includes first and second power drivers, a switching unit and a word line driver. The first power driver is driven to a boosting voltage level and the second power driver is driven to an internal power voltage level. The switching unit transfers a first output of the first power driver to the word line driver in response to a first switching signal and transfers a second output of the second power driver to the word line driver in response to a second switching signal. The word line driver alternately drives a word line to the first output and the second output transferred from the switching unit in response to a word line driving signal.
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申请公布号 |
US7808858(B2) |
申请公布日期 |
2010.10.05 |
申请号 |
US20070875171 |
申请日期 |
2007.10.19 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE YUN-SANG;LEE JUNG-BAE |
分类号 |
G11C8/00 |
主分类号 |
G11C8/00 |
代理机构 |
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代理人 |
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