发明名称 |
Method for forming non-volatile memory with shield plate for limiting cross coupling between floating gates |
摘要 |
A memory system is disclosed that includes a set of non-volatile storage elements. Each of the non-volatile storage elements includes source/drain regions at opposite sides of a channel in a substrate and a floating gate stack above the channel. The memory system also includes a set of shield plates positioned between adjacent floating gate stacks and electrically connected to the source/drain regions for reducing coupling between adjacent floating gates. The shield plates are selectively grown on the active areas of the memory without being grown on the inactive areas. In one embodiment, the shield plates are epitaxially grown silicon positioned above the source/drain regions.
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申请公布号 |
US7807533(B2) |
申请公布日期 |
2010.10.05 |
申请号 |
US20080024787 |
申请日期 |
2008.02.01 |
申请人 |
SANDISK CORPORATION |
发明人 |
LUTZE JEFFREY W.;MOKHLESI NIMA |
分类号 |
H01L21/336;G11C11/56;G11C16/04;H01L21/8247;H01L27/115 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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