发明名称 |
Plasma processing apparatus and plasma processing method |
摘要 |
The present invention provides a plasma processing apparatus or a plasma processing method that can etch a multilayer film structure for constituting a gate structure with high accuracy and high efficiency. A plasma processing method of, on processing a sample on a sample stage 112 in a depressurized discharge room 117, etching a multilayer film (including a high-k and a metal gate) at 0.1 Pa or less and with the sample stage 112 temperature-regulated by using a pressure gauge 133 to be used for pressure regulation and connected to the processing room and a main pump for exhaustion 130.
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申请公布号 |
US7807581(B2) |
申请公布日期 |
2010.10.05 |
申请号 |
US20070683014 |
申请日期 |
2007.03.07 |
申请人 |
HITACHI HIGH-TECHNOLOGIES CORPORATION |
发明人 |
TAUCHI SUSUMU;MAKINO AKITAKA;WATANABE SEIICHI;YASUI NAOKI |
分类号 |
H01L21/302 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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