| 摘要 |
An integrated circuit back end capacitor structure includes a first dielectric layer on a substrate, a thin film bottom plate on the first dielectric layer, and a second dielectric layer on the first dielectric layer and the bottom plate, and a thin film top plate disposed on the second dielectric layer. The thin film top plate and bottom plate are composed of thin film resistive layers, such as sichrome, which also are utilized to form back end thin film resistors having various properties. Interconnect conductors of a metallization layer contact the top and bottom plates through corresponding vias.
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