| 摘要 |
PURPOSE: A chemical vapor deposition apparatus is provided to improve reactivity of processing gas and deposition efficiency by restricting the diffusion of the processing gas within the chamber. CONSTITUTION: A chemical vapor deposition apparatus comprises a chamber(10), a stage(20), an injection nozzle(121a), and a guide nozzle(121b). The stage is installed inside the chamber to place a wafer. The injection nozzle is installed inside the chamber and sprays processing gas toward the stage. The guide nozzle is installed on the exterior of the injection nozzle and guides the processing gas to the stage.
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