METHOD OF FORMING ZNO FILM HAVING SINGLE CRYSTALLINE STRUCTURE

摘要

PURPOSE: A method of forming ZnO film having single crystalline structure, which forms an oxidation zinc thin film of a monocrystal from which crystal defect is removed, is provided to provide the foundation of a light emitting layer formation technology having an oxidation zinc thin film and a multiple quantum well of P-type. CONSTITUTION: A method of forming ZnO film having single crystalline structure comprises next steps. Zinc source gas and oxygen gas are supplied. An oxide zinc thin film of monocrystal is formed on the surface of a substrate. An oxidation zinc thin film of monocrystal form is formed by controlling the molar ratio of the zinc comparison oxygen gas. The temperature of substrate is 300~900°C. The pressure of the inside of chamber is 20 torr atmospheric pressure. The molar ratio of the zinc comparison oxygen gas is 7500~50000. The temperature of substrate is 600~700°C.