| 摘要 |
PURPOSE: A semiconductor device with buried gate and a manufacturing method thereof are provided to prevent the deterioration of the buried gate while processing post heat cycle by forming a sealing layer on a front side formed with the buried gate. CONSTITUTION: A substrate(21) equipped with a plurality of trenches(24) is arranged. A buried gate(25) buries a portion of the trench. An insulation layer(27A) buries a portion of the trench on the buried gate. A sealing layer(28) buries the remaining of the trench. A plug(31) is close through the sealing film with substrate.
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