| 摘要 |
PURPOSE: A semiconductor device manufacturing method is provided to prevent the exposure of a landing plug for contacting a bit line by minimizing the loss of insulation layer arranged on a side wall of the top of the landing plug during wet etching process. CONSTITUTION: An insulating layer including a lamination structure of a first insulation layer(120) and a second insulation layer(122) is formed on the top of a semiconductor substrate(100). A plurality of plugs is formed within the insulating layer. An inter-layer insulating film(132) is formed on the plug and the insulating layer.
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