SEMICONDUCTOR HAVING CONTACT-HOLE BUNKER PREVENTING PAD WITH A PATTERNED CONTACT-HOLE VERNIER AREA AND METHOD OF THE SAME

摘要

PURPOSE: A semiconductor device having contact-hole bunker preventing pad with a patterned contact-hole vernier area and a manufacturing method thereof are provided to prevent the bunker defect of the contact hole by forming a contact hole vernier area as segment pattern of line and space shape. CONSTITUTION: A contact hole Bunker protection pad pattern(110) comprises a segment pattern(112) formed on the contact hole vernier area. The segment patterns are formed in the form of line and space. An insulating layer is formed at the upper part of the contact hole bunker protection pad pattern.