| 摘要 |
PURPOSE: A semiconductor pressure sensor and a manufacturing method thereof are provided to make a diaphragm thin by the change of the thickness of a film, since the diaphragm is formed on the surface of a substrate. CONSTITUTION: A semiconductor pressure sensor comprises a substrate(1), a diaphragm(5), a gauge resistor(7), a through-hole(30), and an anchor portion(20). The substrate has first and second main surfaces. The diaphragm is formed on the first main surface of the substrate and is formed of films. The gauge resistor detects the deformation of diaphragm as the change of the electric resistor. The through-hole passes through the substrate from the second main surface to the first main surface. The anchor portion has the same material with the film for fixing the diaphragm on the first main surface of the substrate.
|
