| 摘要 |
PURPOSE: A nonvolatile memory device and a programming method thereof are provided to reduce the distribution width of a state-based threshold voltage by removing under program cells. CONSTITUTION: A first program operation is executed(710) after first and second data are inputted(700). A first verification operation of memory cells is executed(720). A second program operation of the memory cells is executed(740). Data saved in a first sub register is transmitted in to a first main register(750).
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