| 摘要 |
PURPOSE: A programming method of a nonvolatile memory device is provided to improve a cell property by controlling the number of a memory cell which is included in the cell boosting of a cell string which is inhibited during a program operation process. CONSTITUTION: A nonvolatile memory device, which includes memory blocks between a drain select line and a source selection line, is included. A memory block, which is selected among the memory blocks, is enabled according to a program instruction. A program voltage is applied to a first word line which is selected for a program operation in the enabled memory block. Word lines are classified into a plurality of groups between the first word line and the source selection line. A first pass voltage is applied to at least three word lines of a first group which is the nearest to the first word line.
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