发明名称 Method for using a memory cell comprising switchable semiconductor memory element with trimmable resistance
摘要 A nonvolatile memory cell comprising a diode formed of semiconductor material can store memory states by changing the resistance of the semiconductor material by application of a set pulse (decreasing resistance) or a reset pulse (increasing resistance.) In preferred embodiments, set pulses are applied with the diode under forward bias, while reset pulses are applied with the diode in reverse bias. By switching resistivity of the semiconductor material of the diode, a memory cell can be either one-time programmable or rewriteable, and can achieve two, three, four, or more distinct data states.
申请公布号 US7800933(B2) 申请公布日期 2010.09.21
申请号 US20060496986 申请日期 2006.07.31
申请人 SANDISK 3D LLC 发明人 KUMAR TANMAY;HERNER S. BRAD;SCHEUERLEIN ROY E;PETTI CHRISTOPHER J
分类号 G11C11/00;G11C11/36 主分类号 G11C11/00
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