发明名称 |
Phase-change memory device having phase change material pattern shared between adjacent cells and electronic product including the phase-change memory |
摘要 |
Provided is a phase-change memory device including a phase-change material pattern of which strips are shared by neighboring cells. The phase-change memory device includes a plurality of bottom electrodes arranged in a matrix array. The phase-change material pattern is formed on the bottom electrodes, and the strips of the phase-change material pattern are electrically connected to the bottom electrodes. Each strip of the phase-change material pattern is connected to at least two diagonally neighboring bottom electrodes of the bottom electrodes.
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申请公布号 |
US7800095(B2) |
申请公布日期 |
2010.09.21 |
申请号 |
US20070941173 |
申请日期 |
2007.11.16 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
AN HYEONG-GEUN;HORII HIDEKI;SHIN JONG-CHAN;AHN DONG-HO;BAE JUN-SOO |
分类号 |
H01L47/00 |
主分类号 |
H01L47/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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