发明名称 |
MOSFET device featuring a superlattice barrier layer and method |
摘要 |
A method of forming a semiconductor structure includes forming a channel layer; forming a superlattice barrier layer overlying the channel layer, and forming a gate dielectric overlying the superlattice barrier layer. The superlattice barrier layer includes alternating first and second layers of barrier material. In addition, the superlattice barrier layer is configured for increasing a transconductance of the semiconductor device by at least a factor of three over a semiconductor device absent such superlattice barrier layer.
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申请公布号 |
US7799647(B2) |
申请公布日期 |
2010.09.21 |
申请号 |
US20070831394 |
申请日期 |
2007.07.31 |
申请人 |
FREESCALE SEMICONDUCTOR, INC. |
发明人 |
DROOPAD RAVINDRANATH;PASSLACK MATTHIAS;RAJAGOPALAN KARTHIK |
分类号 |
H01L21/336;H01L31/00 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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