发明名称 |
Manufacturing method of semiconductor device, manufacturing method of display device, semiconductor device, display device, and electronic device |
摘要 |
A method for manufacturing a semiconductor device provided with a circuit capable of high speed operation while the manufacturing cost is reduced. A method for manufacturing a semiconductor device which includes forming an ion-doped layer at a predetermined depth from a surface of a single-crystal semiconductor substrate and forming a first insulating layer over the single-crystal semiconductor substrate; forming a second insulating layer over part of an insulating substrate and forming a non-single-crystal semiconductor layer over the second insulating layer; bonding the single-crystal semiconductor substrate to a region of the insulating substrate where the second insulating layer is not formed, with the first insulating layer interposed therebetween; and forming a single-crystal semiconductor layer over the insulating substrate by separating the single-crystal semiconductor substrate at the ion-doped layer which acts as a separation surface so that the ion-doped layer is separated from the insulating substrate.
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申请公布号 |
US7799620(B2) |
申请公布日期 |
2010.09.21 |
申请号 |
US20080078093 |
申请日期 |
2008.03.27 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
HONDA TATSUYA |
分类号 |
H01L21/00;G02F1/1345;G02F1/1368;H01L21/02;H01L21/20;H01L21/265;H01L21/336;H01L21/84;H01L27/12;H01L29/786 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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