| 摘要 |
Semiconductor-on-diamond devices and methods for making such devices are provided. In one aspect, for example, a method for making a semiconductor-on-diamond substrate is provided, including depositing a conformal amorphous diamond layer on a single crystal Si base layer, thereby forming in situ a single crystal SiC layer therebetween, removing the amorphous diamond layer to expose the SiC layer, and epitaxially depositing a single crystal diamond layer on the SiC layer.
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