发明名称 |
Nonvolatile semiconductor memory device and programming method thereof |
摘要 |
Disclosed is a nonvolatile memory device and programming method of a nonvolatile memory device. The programming method of the nonvolatile memory device includes conducting a first programming operation for a memory cell, retrieving original data from the memory cell after the first programming operation, and conducting a second programming operation with reference to the original data and a second verifying voltage higher than a first verifying voltage of the first programming operation.
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申请公布号 |
US7800944(B2) |
申请公布日期 |
2010.09.21 |
申请号 |
US20080129820 |
申请日期 |
2008.05.30 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
CHUN JIN-YOUNG;JEONG JAE-YONG;YOON CHI-WEON |
分类号 |
G11C11/34 |
主分类号 |
G11C11/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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