发明名称 Semiconductor device and method of fabricating the same
摘要 The present invention relates to a semiconductor device and a method of manufacture thereof, being capable of improving the high integration by increasing a cell region while securing the reliability of device and the process margin through forming a cell region and a core region with the stacking structure.
申请公布号 US7800197(B2) 申请公布日期 2010.09.21
申请号 US20080134144 申请日期 2008.06.05
申请人 HYNIX SEMICONDUCTOR INC. 发明人 HWANG YUN TAEK;LIM KWANG YONG
分类号 H01L27/00;H01L21/20;H01L21/336 主分类号 H01L27/00
代理机构 代理人
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