发明名称 |
Semiconductor device and method of fabricating the same |
摘要 |
The present invention relates to a semiconductor device and a method of manufacture thereof, being capable of improving the high integration by increasing a cell region while securing the reliability of device and the process margin through forming a cell region and a core region with the stacking structure.
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申请公布号 |
US7800197(B2) |
申请公布日期 |
2010.09.21 |
申请号 |
US20080134144 |
申请日期 |
2008.06.05 |
申请人 |
HYNIX SEMICONDUCTOR INC. |
发明人 |
HWANG YUN TAEK;LIM KWANG YONG |
分类号 |
H01L27/00;H01L21/20;H01L21/336 |
主分类号 |
H01L27/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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