| 摘要 |
A semiconductor device includes a tunnel insulation film formed on a semiconductor substrate, a floating gate electrode formed on the tunnel insulation film, an inter-electrode insulation film formed on the floating gate electrode, a control gate electrode formed on the inter-electrode insulation film, a pair of oxide films which are formed between the tunnel insulation film and the floating gate electrode and are formed near lower end portions of a pair of side surfaces of the floating gate electrode, which are parallel in one of a channel width direction and a channel length direction, and a nitride film which is formed between the tunnel insulation film and the floating gate electrode and is formed between the pair of oxide films.
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