发明名称 |
Optical proximity correction method, optical proximity correction apparatus, and optical proximity correction program, method of manufacturing semiconductor device, design rule formulating method, and optical proximity correction condition calculating method |
摘要 |
In the present invention, there is provided an optical proximity correction method including steps of: extracting a gate length distribution of a gate from a pattern shape of the gate of a transistor to be formed on a wafer; calculating electric characteristics of the gate; determining a gate length of a rectangular gate having electric characteristics equivalent to the calculated electric characteristics; calculating a corrective coefficient for describing an associated relationship between a statistical value of the extracted gate length distribution and the determined gate length; extracting a gate length distribution of a gate of a transistor by printing the design pattern, and calculating a gate length distribution representative value from the statistical value of the gate length distribution using the calculated corrective coefficient; and correcting the design pattern so that the calculated gate length distribution representative value will be a specification value.
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申请公布号 |
US7802225(B2) |
申请公布日期 |
2010.09.21 |
申请号 |
US20080026604 |
申请日期 |
2008.02.06 |
申请人 |
SONY CORPORATION |
发明人 |
KOIKE KAORU;NAKAYAMA KOHICHI |
分类号 |
G06F17/50;G03F1/36;G03F1/70;H01L21/027 |
主分类号 |
G06F17/50 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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