发明名称 RFID device having a nonvolatile ferroelectric memory
摘要 A radio frequency identification (RFID) device includes an antenna configured to transmit or receive a radio frequency signal to or from an external communication apparatus; an analog block configured to generate a first power voltage in response to the radio frequency signal; a digital block configured to receive the first power voltage from the analog block, to transmit a response signal to the analog block, and to output a memory control signal; and a memory configured to read/write data in response to the memory control signal, the memory including a high voltage generating unit for generating a second power voltage from the first power voltage, a first portion driven by the second power voltage, and a second portion driven by the first power voltage, wherein the level of the first power voltage is lower than that of the second power voltage.
申请公布号 US7800481(B2) 申请公布日期 2010.09.21
申请号 US20060482029 申请日期 2006.07.07
申请人 HYNIX SEMICONDUCTOR INC. 发明人 KANG HEE BOK;AHN JIN HONG
分类号 H04Q5/22;G11C7/00;G11C7/10 主分类号 H04Q5/22
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