发明名称 Method of manufacturing a contact structure to avoid open issue
摘要 A method of manufacturing a contact structure to avoid open issue is provided. The method includes the steps of providing a substrate with a contact region, forming an insulating layer to cover the substrate, forming a contact hole in the insulating layer to expose the contact region, conformally depositing a titanium layer on the insulating layer, conformally depositing a titanium nitride layer on the titanium layer, and performing a plasma process on the titanium nitride layer to remove the impurities in the titanium nitride layer.
申请公布号 US7799676(B2) 申请公布日期 2010.09.21
申请号 US20070736374 申请日期 2007.04.17
申请人 NANYA TECHNOLOGY CORP. 发明人 CHEN YINAN
分类号 H01L21/4763 主分类号 H01L21/4763
代理机构 代理人
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