发明名称 Power MOSFET with integrated drivers in a common package
摘要 A driver stage consisting of an N channel FET and a P channel FET are mounted in the same package as the main power FET. The power FET is mounted on a lead frame and the driver FETs are mounted variously on a separate pad of the lead frame or on the main FET or on the lead frame terminals. All electrodes are interconnected within the package by mounting on common conductive surfaces or by wire bonding. The drivers are connected to define either an inverting or non-inverting drive.
申请公布号 USRE41719(E1) 申请公布日期 2010.09.21
申请号 US20050183302 申请日期 2005.07.15
申请人 INTERNATIONAL RECTIFIER CORPORATION 发明人 KINZER DANIEL;SAMMON TIM;PAVIER MARK;AMALI ADAM
分类号 H01L29/76;H01L23/495;H01L29/94;H01L31/062;H01L31/113 主分类号 H01L29/76
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