发明名称 |
A FIELD EFFECT TRANSISTOR OF SIC FOR HIGH TEMPERATURE APPLICATION, USE OF SUCH A TRANSISTOR AND A METHOD FOR PRODUCTION THEREOF |
摘要 |
A field effect transistor of SiC for high temperature application has the source region layer (4), the drain region layer (5) and the channel region layer (6, 7) vertically separated from a front surface (14), where a gate electrode (12) is arranged, for reducing the electric field at said surface in operation of the transistor and in the case of operation as a gas sensor permitting all electrodes except for the gate electrode to be protected from tre atmosphere.
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申请公布号 |
CA2370869(C) |
申请公布日期 |
2010.09.21 |
申请号 |
CA20002370869 |
申请日期 |
2000.04.20 |
申请人 |
ACREO AB |
发明人 |
KONSTANTINOV, ANDREI;HARRIS, CHRISTOPHER;SAVAGE, SUSAN |
分类号 |
F02D35/00;H01L29/78;H01L;H01L21/336;H01L29/12;H01L29/24 |
主分类号 |
F02D35/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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