发明名称 |
High electron mobility transistor semiconductor device having field mitigating plate and fabrication method thereof |
摘要 |
A semiconductor device includes a T-gate disposed between drain and source regions and above a barrier layer to form a Schottky contact to the channel layer. A first inactive field mitigating plate is disposed above a portion of the T-gate and a second active field plate is disposed above the barrier layer and in a vicinity of the T-gate.
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申请公布号 |
US7800132(B2) |
申请公布日期 |
2010.09.21 |
申请号 |
US20070976590 |
申请日期 |
2007.10.25 |
申请人 |
NORTHROP GRUMMAN SYSTEMS CORPORATION |
发明人 |
SMORCHKOVA IOULIA;NAMBA CAROL;LIU PO-HSIN;COFFIE ROBERT;TSAI ROGER |
分类号 |
H01L29/778 |
主分类号 |
H01L29/778 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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