发明名称 Sense amplifier and semiconductor memory device having the same
摘要 A sense amplifier circuit includes a current sense amplifier, a voltage sense amplifier, and an output stabilizing circuit. The current sense amplifier amplifies differential input currents to generate differential output voltages and provides the differential output voltages to a sense amplifier output line pair. The voltage sense amplifier is coupled to the sense amplifier output line pair to amplify the differential output voltages on the sense amplifier output line pair. The voltage sense amplifier is activated at the time later than a time of activation of the current sense amplifier. The output stabilizing circuit is coupled to the sense amplifier output line pair to stabilize the differential output voltages on the sense amplifier output line pair. The output stabilizing circuit has a positive input resistance. Accordingly, the sense amplifier circuit reduces power consumption and an occupied area on a semiconductor chip.
申请公布号 US7800970(B2) 申请公布日期 2010.09.21
申请号 US20080167396 申请日期 2008.07.03
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 HONG SANG-PYO;LIM JUN-HEE
分类号 G11C7/02;G11C7/10;G11C16/06;H03F3/45 主分类号 G11C7/02
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