Manufacturing method of flash memory device comprising gate columns penetrating through a cell stack,申请号US12212819-传众专利搜索

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发明名称	Manufacturing method of flash memory device comprising gate columns penetrating through a cell stack
摘要
申请公布号	US7799616(B2)	申请公布日期	2010.09.21
申请号	US12212819	申请日期	2008.09.18
申请人		发明人
分类号	H01L0021/000082	主分类号	H01L0021/000082
代理机构		代理人
主权项
地址

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