发明名称 Method for manufacturing high-density indium tin oxide target, methods for preparing tin oxide powder and indium oxide powder used therefor
摘要 A method for manufacturing an indium tin oxide (ITO) target and methods for preparing indium oxide powder (In2O3) and tin oxide powder (SnO2). The method for manufacturing an ITO (indium tin oxide) target includes preparing an In2O3 powder having a surface area of about 10-18 m2/g and an average particle diameter of between about 40 to 80 nm; preparing a SnO2 powder having a surface area of about 8-15 m2/g and an average particle diameter of about 60-100 nm; molding a mixture of the In2O3 powder and the SnO2 powder; and sintering the mixture at atmospheric pressure under oxidation atmosphere. The ITO target is applicable for a high-quality, transparent electrode for a display, such as a liquid crystal display, electroluminescent display, or field emission display.
申请公布号 US7799312(B2) 申请公布日期 2010.09.21
申请号 US20070806064 申请日期 2007.05.29
申请人 发明人 SONG KYONG-HWA;PARK SANG-CHEOL;NAM JUNG-GYU
分类号 C01G19/00 主分类号 C01G19/00
代理机构 代理人
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