METHOD OF MANUFACTURING GALLIUM NITRIDE-BASED LIGHT EMITTING DIODE ELEMENT OF VERTICAL STRUCTURE

摘要

PROBLEM TO BE SOLVED: To provide a method of manufacturing a gallium nitride-based light emitting diode element of a vertical structure.

SOLUTION: A rugged pattern is formed on the surface of a sapphire substrate; a buffer layer, a first n-type gallium nitride layer 150a, and a first AlGaN layer 200a are formed on the rugged pattern successively and accumulatively; a GaN layer 210 is formed so as to form a two dimensional electron gas layer on a junction surface of the first AlGaN layer 200a; a second AlGaN layer 200b is formed so as to form a two dimensional electron gas layer on a junction surface of the GaN layer 210; a second n-type gallium nitride layer 150b is formed; the sapphire substrate is removed; the buffer layer having the surface with rugged pattern is exposed; both surfaces of the exposed buffer layer and the first n-type gallium nitride layer 150a are etched; the surface of the first gallium nitride layer 150a is patterned so as to have rugged pattern; and a plurality of projecting parts 190a, 190b are formed on the surface of the rugged pattern of the first n-type gallium nitride layer 150a.

COPYRIGHT: (C)2010,JPO&INPIT