| 摘要 |
<P>PROBLEM TO BE SOLVED: To easily achieve perfect charge transfer even if a photodiode area is widened. <P>SOLUTION: A solid-state imaging element includes: a P type well region 3 formed on an N type semiconductor substrate 2; a photodiode part 4 constituted of three N type regions formed on the P type well region 3; an N type drain region 7 formed at a position near the N type region of the photodiode part 4; a P type barrier layer 8 formed between the N type drain region 7 and the photodiode part 4; and a transfer gate 9 formed above the P type barrier layer 8. The three N type regions are constituted of three levels of impurity concentration regions including an N impurity concentration level region 41 near an electric charge transfer gate as a first conductivity type region nearest to the transfer gate 9, an N- impurity concentration level region 42 covering the outside of the N impurity concentration level region 41 near an electric charge transfer gate excluding the transfer gate 9 side, and an N-- impurity concentration level region 43 covering the outside of the N- impurity concentration level region 42 excluding the transfer gate 9 side. The N type impurity concentration of each of the N type regions is set lower as each of the N type regions is away from the transfer gate 9. <P>COPYRIGHT: (C)2010,JPO&INPIT |
