| 摘要 |
<P>PROBLEM TO BE SOLVED: To achieve high integration without reducing conversion efficiency when converting charge into voltage. <P>SOLUTION: A charge storage capacitor 26 for achieving a global shutter function is provided between an amplifying transistor 24 and a selection transistor 25. An FD section 28 is reset. While charge corresponding to charge of the FD section 28 at the time of reset is held in the charge storage capacitor 26, the charge is transferred from a photodiode 21 to the FD section 28. A voltage across the charge storage capacitor 26 corresponding to the charge at the time of reset is derived through the selection transistor 25 as a reset voltage. Thereafter, the charge storage capacitor 26 holds therein the charge corresponding to the charge of the FD section 28 at the time of charge transfer from the photodiode 21, and the voltage across the charge storage capacitor 26 is derived through the selection transistor 25 as a signal voltage. <P>COPYRIGHT: (C)2010,JPO&INPIT |
