发明名称 SEMICONDUCTOR DEVICE, AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a system and method for manufacturing a semiconductor die connection using through-silicon vias (TSVs). <P>SOLUTION: This semiconductor device is a semiconductor device in which a semiconductor die is manufactured using both via-first TSVs 401 and via-last TSVs 403 for both establishing a low resistance path for a die connection between each of dies 501, 505, 507 adjacent to each other and providing a low resistance path for through channels between a plurality of dies. <P>COPYRIGHT: (C)2010,JPO&INPIT</p>
申请公布号 JP2010219526(A) 申请公布日期 2010.09.30
申请号 JP20100049223 申请日期 2010.03.05
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD 发明人 RA MEIKEN;GO KOKUYU
分类号 H01L21/3205;H01L23/52;H01L25/065;H01L25/07;H01L25/18 主分类号 H01L21/3205
代理机构 代理人
主权项
地址