发明名称 |
SEMICONDUCTOR DEVICE, AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE |
摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a system and method for manufacturing a semiconductor die connection using through-silicon vias (TSVs). <P>SOLUTION: This semiconductor device is a semiconductor device in which a semiconductor die is manufactured using both via-first TSVs 401 and via-last TSVs 403 for both establishing a low resistance path for a die connection between each of dies 501, 505, 507 adjacent to each other and providing a low resistance path for through channels between a plurality of dies. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
申请公布号 |
JP2010219526(A) |
申请公布日期 |
2010.09.30 |
申请号 |
JP20100049223 |
申请日期 |
2010.03.05 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD |
发明人 |
RA MEIKEN;GO KOKUYU |
分类号 |
H01L21/3205;H01L23/52;H01L25/065;H01L25/07;H01L25/18 |
主分类号 |
H01L21/3205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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