| 摘要 |
PROBLEM TO BE SOLVED: To provide a transistor which achieve increase in the SOA (safe operating area) and favorable static property at the same time. SOLUTION: A semiconductor device has: a collector layer (2) of a first conductivity type; a base layer (3) of a second conductivity type which is formed on the collector layer (2); an emitter layer (4) of the first conductivity type which is formed on the base layer (3) like islands; base contacts (11') through which the base layer (3) and base electrodes (11) are electrically connected; and emitter contacts (12') through which the emitter layer (4) and emitter electrodes (12) are electrically connected. The semiconductor device is further provided with trenches (6) which are formed between the base contacts (11') and the emitter contacts (12') in plan view. COPYRIGHT: (C)2010,JPO&INPIT |
