SEMICONDUCTOR DEVICE WITH SCHOTTKY BARRIER DIODE, AND METHOD OF MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device which has a SBD structure capable of improving a surge withstand and reducing a resistance value in forward direction. SOLUTION: Forming an n-type impurity layer 6 along a side of a p+type impurity layer 3 makes an expanse of depletion layer extending from a side part of the p+type impurity layer 3 to a n-type drift layer 2 small. Therefore a width of the depletion layer formed at a PN junction narrows, and the resistance value in forward direction can be reduced. The area of the p+type impurity layer 3 per a unit area of a SiC semiconductor device can enlarge and both of improvement of surge withstand and reduction of resistance value can be achieved, because the resistance value in forward direction can be reduced. COPYRIGHT: (C)2011,JPO&INPIT