Ti, Ta, Hf, Zr AND RELATED METAL SILICON AMIDE FOR ALD/CVD OF METAL-SILICON NITRIDE, OXIDE OR OXYNITRIDE

摘要

PROBLEM TO BE SOLVED: To provide precursors suitable for forming metal silicon nitride base film, or metal silicon oxide or metal silicon oxynitride base film. SOLUTION: Organometallic complexes represented by the structure of the figure are provided. Wherein, M is a metal selected from the group 4 of the element periodic table. CVD and ALD deposition processes use the complex. COPYRIGHT: (C)2011,JPO&INPIT