| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method for processing a semiconductor substrate which processes the semiconductor substrate with a solution having an extremely low concentration of CN<SP>-</SP>ion to remove metallic contaminations therefrom, and to provide a method for manufacturing a semiconductor device. <P>SOLUTION: Cleaning the semiconductor substrate with the solution containing a small amount of CN<SP>-</SP>ion and adjusted at pH 9 to 14 at a temperature of 50°C or below, preferably at a range of 30 to 40°C, removes the initial metallic contamination of a surface copper concentration of about 10<SP>13</SP>atom/cm<SP>2</SP>to 10<SP>9</SP>atom/cm<SP>2</SP>or below. The solution with a small amount of remaining CN<SP>-</SP>ion is simply removed by absorption or the like to an ion exchange resin to easily meet environmental standards. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
