发明名称 METHOD FOR PRODUCING ZINC OXIDE TRANSPARENT CONDUCTIVE FILM AND PRODUCTION APPARATUS FOR PERFORMING THE METHOD
摘要 PROBLEM TO BE SOLVED: To reduce cost and to save energy by achieving low resistivity and large area of a nontoxic transparent conductive film thereby increasing selectivity of a substrate in a production process. SOLUTION: A potential has been applied to a zinc oxide sample 2 on a transparent substrate 1 to form oxygen plasma OP on the front face, and a plasma space potential is controlled by a d.c. power source 9, an a.c. power source 10 or a pulse power source 11. The electronic temperature distribution of the oxygen plasma OP is changed, sheath voltage between the zinc oxide sample 2 and the oxygen plasma OP is controlled, zinc vapor ZV is produced by heating zinc Zn shots 8, the quantities and momentums or the like of various particles in the vicinities of the amorphous transparent substrate 1 are monitored by a mass spectroscope 14 and a plasma emission analyzer 13, each quantity is controlled by the three-dimensional movement of an oven, the mass flow of gaseous oxygen, power source power for generating plasma or the like, and the elemental components in the obtained ZnO transparent conductive film are controlled in such a manner that, for the lower abundance of zinc and oxygen, the ratio of impurity elements other than zinc, oxygen and hydrogen becomes≤0.4%. COPYRIGHT: (C)2011,JPO&INPIT
申请公布号 JP2010261084(A) 申请公布日期 2010.11.18
申请号 JP20090113721 申请日期 2009.05.08
申请人 IBARAKI UNIV 发明人 SATO NAOYUKI;IKEHATA TAKASHI
分类号 C23C14/54;C23C14/08;C23C14/32;H01B13/00;H01L21/363;H01L51/50;H05B33/10;H05B33/28 主分类号 C23C14/54
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