发明名称 Dielectric device
摘要 The dielectric device includes a substrate, a lower electrode, a dielectric layer, and an upper electrode. The lower electrode is bonded onto the substrate. The dielectric layer is bonded onto the lower electrode. The dielectric layer is obtained through thermal treatment of a film layer formed by spraying of a powdery dielectric material and a fine-particulate metal. In the thus-formed film layer, the metal is dispersed in the matrix of the dielectric material. Thermal treatment of the film layer causes migration of the metal in the film layer. This metal migration causes a lower-electrode-adjacent portion and upper-surface-adjacent portion of the dielectric layer to have different metal contents.
申请公布号 US7842398(B2) 申请公布日期 2010.11.30
申请号 US20090419499 申请日期 2009.04.07
申请人 NGK INSULATORS, LTD. 发明人 NANATAKI TSUTOMU;KOBAYASHI NOBUYUKI
分类号 B32B5/18;B32B15/04 主分类号 B32B5/18
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