METHOD FOR FILLING VIA AND METHOD FORMING THROUGH ELECTRODE OF SEMICONDUCTOR PACKAGE USING THE SAME

摘要

PURPOSE: The penetrating electrode formation method of VIA filling method and semiconductor package using the same accomplishes the via filling of the high aspect ratio by the single dry process. CONSTITUTION: The via(312) is formed in the underlying layer(310). The thin film(320) for the catalyst adsorption is evaporated on the underlying layer including via. The catalyst(330) is adsorped in the surface of the thin film for the catalyst adsorption to the uniform distribution. The plasma processing operates about the outcome in which catalysts are adsorped to the uniform distribution as described above.