| 摘要 |
PURPOSE: A fuse structure for a high integrated semiconductor device is provided to prevent an empty space in a fuse due to the movement of the fuse by forming the fuse on not the upper side of a contact but the sidewall. CONSTITUTION: Different voltage levels and electrical signals are applied to two terminals(201,203). A plurality of contacts(202,204) are respectively formed on two terminals. A fuse(220) is connected to one sidewall except the upper surface of the plurality of contacts and electrically connects two terminals. The fuse includes copper. The thickness of the fuse is 2000 angstroms.
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