| 摘要 |
PURPOSE: An internal voltage generation circuit and a semiconductor memory device thereof are provided to stably execute an internal operation by executing a charge pumping process and decreasing the instantaneous maximum current consumption value of a power voltage, thereby minimizing the change of the power voltage. CONSTITUTION: A pumping part(41) generates an internal voltage which has higher level than a power voltage by executing a charge pumping process. A pumping control part(42) outputs a pumping driving signal in order to drive the pumping part by using the power voltage as a driving power part. The pumping control part controls the driving force of the pumping driving signal according to an internal operation mode. A first driving part(42_1) drives an output terminal in response to the pumping control signal. A second driving part(42_2) selectively drives the output terminal in response to the first operation mode signal and the pumping control signal. |
