发明名称 |
PROCESS FOR PRODUCING LAMINATE COMPRISING AL-BASED GROUP III NITRIDE SINGLE CRYSTAL LAYER, LAMINATE PRODUCED BY THE PROCESS, PROCESS FOR PRODUCING AL-BASED GROUP III NITRIDE SINGLE CRYSTAL SUBSTRATE USING THE LAMINATE, AND ALUMINUM NITRIDE SINGLE CRYSTAL SUBSTRATE |
摘要 |
The present invention is a method for producing a laminated body, comprising the steps of: (1) preparing a base substrate having a surface formed of a single crystal which is different from the material constituting the Al-based group-III nitride single crystal layer to be formed; (2) forming an Al-based group-III nitride single crystal layer having a thickness of 10 nm to 1.5 µm on the single crystal surface of the prepared base substrate; (3) forming on the Al-based group-III nitride single crystal layer a non-single crystal layer being 100 times or more thicker than the Al-based group-III nitride single crystal layer without breaking the previously-obtained Al-based group-III nitride single crystal layer; and (4) removing the base substrate. The method provides a substrate which can be suitably used as a base substrate for producing an Al-based group-III nitride single crystal self-supporting substrate, of which surface is formed of a single crystal of an Al-based group-III nitride, and which is free from cracking and warpage. |
申请公布号 |
KR20100138879(A) |
申请公布日期 |
2010.12.31 |
申请号 |
KR20107017711 |
申请日期 |
2008.12.16 |
申请人 |
NATIONAL UNIVERSITY CORPORATION TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY;TOKUYAMA CORPORATION |
发明人 |
NAGASHIMA TORU;HAKOMORI AKIRA;TAKADA KAZUYA;ISHIZUKI MASANARI;KOUKITU AKINORI;KUMAGAI YOSHINAO |
分类号 |
C30B29/38;C30B25/18;H01L21/02 |
主分类号 |
C30B29/38 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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