| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device for protecting the backside of a semiconductor substrate, reducing stress caused by a silicon nitride film on the backside, and preventing the semiconductor substrate from remarkably protrusively bending toward the front surface side.SOLUTION: The method of manufacturing the semiconductor device includes, in the following order, steps of: forming silicon nitride films on the front and back sides of a semiconductor substrate; leaving the silicon nitride film on the backside of the semiconductor substrate by reducing the film thickness of the silicon nitride film on the backside relative to the front face of the semiconductor substrate; forming a separation mask opening for selectively exposing the front surface of the semiconductor substrate on the silicon nitride film; forming an element isolation groove on the front face of the semiconductor substrate through the separation mask opening; oxidizing the inner surface of the element isolation groove; filling a silicon oxide film in the element isolation groove at a film thickness exceeding the depth of the element isolation groove; and flattening the silicon oxide film. |
