SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
摘要
An object is to provide a semiconductor device having a structure in which parasitic capacitance between wirings can be efficiently reduced. In a bottom gate thin film transistor using an oxide semiconductor layer, an oxide insulating layer used as a channel protection layer is formed above and in contact with part of the oxide semiconductor layer overlapping with a gate electrode layer, and at the same time an oxide insulating layer covering a peripheral portion (including a side surface) of the stacked oxide semiconductor layer is formed. Further, a source electrode layer and a drain electrode layer are formed in a manner such that they do not overlap with the channel protection layer. Thus, a structure in which an insulating layer over the source electrode layer and the drain electrode layer is in contact with the oxide semiconductor layer is provided.
申请公布号
WO2011013522(A1)
申请公布日期
2011.02.03
申请号
WO2010JP62019
申请日期
2010.07.09
申请人
SEMICONDUCTOR ENERGY LABORATORY CO., LTD.;YAMAZAKI, SHUNPEI;HOSOBA, MIYUKI;SAKATA, JUNICHIRO;KUWABARA, HIDEAKI