发明名称 |
BLANKMASK AND PHOTOMASK MANUFACTURED BY USING THE SAME |
摘要 |
PURPOSE: A blank mask is provided to reduce loading effect by etching radical ion concentration. CONSTITUTION: A blank mask comprise: a metal film formed on a transparent substrate(10); and a hard mask(40) and resist film(50) formed on the upper portion of the metal film. The metal film comprises a single layer or multilayer. The thickness of the light-shielding layer is 100-500 angstrom. |
申请公布号 |
KR20110016741(A) |
申请公布日期 |
2011.02.18 |
申请号 |
KR20090074388 |
申请日期 |
2009.08.12 |
申请人 |
S&STECH CO., LTD. |
发明人 |
NAM, KEE SOO;CHA, HAN SUN;YANG, SIN JU;YANG, CHUL KYU;PARK, NAM SUN |
分类号 |
G03F1/50;G03F1/38;G03F1/46;H01L21/027 |
主分类号 |
G03F1/50 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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