发明名称 BLANKMASK AND PHOTOMASK MANUFACTURED BY USING THE SAME
摘要 PURPOSE: A blank mask is provided to reduce loading effect by etching radical ion concentration. CONSTITUTION: A blank mask comprise: a metal film formed on a transparent substrate(10); and a hard mask(40) and resist film(50) formed on the upper portion of the metal film. The metal film comprises a single layer or multilayer. The thickness of the light-shielding layer is 100-500 angstrom.
申请公布号 KR20110016741(A) 申请公布日期 2011.02.18
申请号 KR20090074388 申请日期 2009.08.12
申请人 S&STECH CO., LTD. 发明人 NAM, KEE SOO;CHA, HAN SUN;YANG, SIN JU;YANG, CHUL KYU;PARK, NAM SUN
分类号 G03F1/50;G03F1/38;G03F1/46;H01L21/027 主分类号 G03F1/50
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