| 发明名称 |
HETEROJUNCTION BIPOLAR TRANSISTOR, AND METHOD OF MANUFACTURING THE SAME |
| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a heterojunction bipolar transistor, and to provide a method of manufacturing the heterojunction bipolar transistor. <P>SOLUTION: Semiconductor structures and methods of manufacturing semiconductors relate to heterojunction bipolar transistors. The method includes forming two devices connected by metal wires on a same wiring level. The metal wire of a first of the two devices is formed by selectively forming a metal cap layer on copper wiring structures. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
| 申请公布号 |
JP2011040748(A) |
申请公布日期 |
2011.02.24 |
| 申请号 |
JP20100178911 |
申请日期 |
2010.08.09 |
| 申请人 |
INTERNATL BUSINESS MACH CORP |
发明人 |
ANTHONY K STAMPER;DUNN JAMES S;JOSEPH ALVIN JOSE |
| 分类号 |
H01L21/3205;H01L21/331;H01L21/82;H01L21/8222;H01L21/8248;H01L21/8249;H01L23/52;H01L27/06;H01L29/737 |
主分类号 |
H01L21/3205 |
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