| 摘要 |
PROBLEM TO BE SOLVED: To suppress degradation of the threshold voltage characteristic of a semi-conductor apparatus. SOLUTION: An aluminum electrode 3 is formed on a surface of a semi-conductor substrate 2. After the surface of the semi-conductor substrate 2 is subjected to the zincate treatment, it is water-rinsed. Then, the electroless plating is executed to form a nickel plating layer and a gold plating layer 6 on the surface of the aluminum electrode 3 in this order. By the water-rinsing after the zincate treatment, the total element concentration of sodium and potassium remaining on the surface of the aluminum electrode 3 is set to be≤9.20×10<SP>14</SP>atoms/cm<SP>2</SP>. The total element concentration of sodium and potassium in an electroless nickel plating bath is set to be≤3,400 ppm by weight. The total element concentration of sodium and potassium remaining on the nickel plating layer 5 and an interface between the nickel plating layer 5 and the aluminum electrode 3 of the semi-conductor apparatus thus manufactured is≤3.20×10<SP>14</SP>atoms/cm<SP>2</SP>. COPYRIGHT: (C)2011,JPO&INPIT |
